共 8 条
4 W single-transverse mode VECSEL utilising intra-cavity diamond heat spreader
被引:24
作者:

Harkonen, A.
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机构: Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

Suomalainen, S.
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机构: Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

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Orsila, L.
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机构: Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

Koskinen, R.
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机构: Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

Okhotnikov, O.
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机构: Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

Calvez, S.
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机构: Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

Dawson, M.
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机构: Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland
机构:
[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland
[2] Univ Strathclyde, Inst Photon, Wolfson Ctr, Glasgow G4 0NW, Lanark, Scotland
关键词:
D O I:
10.1049/el:20060462
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
An optically pumped semiconductor vertical external cavity surface emitting laser. with high output power and excellent beam quality operating at a wavelength near 1.05 mu m, is reported. A transparent diamond heat spreader was used for thermal management of the laser. The gain structure grown by molecular beam epitaxy includes 13 compressively strained InGaAs quantum wells. Maximum output power of 4 W with diffraction-limited beam (M-2 <= 1.15) was achieved using a 2% output coupler and incident pump power of 20 W. It is shown that power scalability is feasible with the presented laser geometry.
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页码:693 / 694
页数:2
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