High-responsivity MoS2 hot-electron telecom-band photodetector integrated with microring resonator

被引：16

作者：

Zhang, Qiao ^{[1
,2
]}

Ji, Yingke ^{[1
,2
]}

Hu, Siqi ^{[1
,2
]}

Li, Zhiwen ^{[1
,2
]}

Li, Chen ^{[1
,2
]}

Gu, Linpeng ^{[1
,2
]}

Tian, Ruijuan ^{[1
,2
]}

Zhang, Jiachen ^{[1
,2
]}

Fang, Liang ^{[1
,2
]}

Zhao, Bijun ^{[1
,2
]}

Zhao, Jianlin ^{[1
,2
]}

Gan, Xuetao ^{[1
,2
]}

机构：

[1] Northwestern Polytech Univ, Sch Phys Sci & Technol, Key Lab Light Field Manipulat & Informat Acquisit, Minist Ind & Informat Technol, Xian 710129, Peoples R China

[2] Northwestern Polytech Univ, Sch Phys Sci & Technol, Shaanxi Key Lab Opt Informat Technol, Xian 710129, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 26期

关键词：

LAYER MOS2; PLASMON; SENSITIVITY;

D O I：

10.1063/5.0093147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems. Published under an exclusive license by AIP Publishing.

引用

页数：6

共 42 条

[11]

Ghatak S, 2011, ACS NANO, V5, P7707, DOI [10.1021/nn202852j, 10.1021/nn202852J]

[12] MoS2 photodetectors integrated with photonic circuits [J].

Gonzalez Marin, Juan Francisco ;

Unuchek, Dmitrii ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Kis, Andras .

NPJ 2D MATERIALS AND APPLICATIONS, 2019, 3 (1)

[13] On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain [J].

Goykhman, Ilya ;

Sassi, Ugo ;

Desiatov, Boris ;

Mazurski, Noa ;

Milana, Silvia ;

de Fazio, Domenico ;

Eiden, Anna ;

Khurgin, Jacob ;

Shappir, Joseph ;

Levy, Uriel ;

Ferrari, Andrea C. .

NANO LETTERS, 2016, 16 (05) :3005-3013

[14] Near-infrared photodetector based on few-layer MoS2 with sensitivity enhanced by localized surface plasmon resonance [J].

Guo, Junxiong ;

Li, Shangdong ;

He, Zhenbei ;

Li, Yiyi ;

Lei, Zhicheng ;

Liu, Yu ;

Huang, Wen ;

Gong, Tianxun ;

Ai, Qinqin ;

Mao, Linna ;

He, Yiwen ;

Ke, Yizhen ;

Zhou, Shifeng ;

Yu, Bin .

APPLIED SURFACE SCIENCE, 2019, 483 :1037-1043

[15] Reconfigurable InSe Electronics with van der Waals Integration [J].

Hu, Siqi ;

Luo, Xiaoguang ;

Xu, Jinpeng ;

Zhao, Qinghua ;

Cheng, Yingchun ;

Wang, Tao ;

Jie, Wanqi ;

Castellanos-Gomez, Andres ;

Gan, Xuetao ;

Zhao, Jianlin .

ADVANCED ELECTRONIC MATERIALS, 2022, 8 (05)

[16] Gate-Switchable Photovoltaic Effect in BP/MoTe2 van der Waals Heterojunctions for Self-Driven Logic Optoelectronics [J].

Hu, Siqi ;

Xu, Jinpeng ;

Zhao, Qinghua ;

Luo, Xiaoguang ;

Zhang, Xutao ;

Wang, Tao ;

Jie, Wanqi ;

Cheng, Yingchun ;

Frisenda, Riccardo ;

Castellanos-Gomez, Andres ;

Gan, Xuetao .

ADVANCED OPTICAL MATERIALS, 2021, 9 (05)

[17] Au-InSe van der Waals Schottky junctions with ultralow reverse current and high photosensitivity [J].

Hu, Siqi ;

Zhang, Qiao ;

Luo, Xiaoguang ;

Zhang, Xutao ;

Wang, Tao ;

Cheng, Yingchun ;

Jie, Wanqi ;

Zhao, Jianlin ;

Mei, Ting ;

Gan, Xuetao .

NANOSCALE, 2020, 12 (06) :4094-4100

[18] Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors [J].

Hu, Siqi ;

Tian, Ruijuan ;

Luo, Xiaoguang ;

Yin, Rui ;

Cheng, Yingchun ;

Zhao, Jianlin ;

Wang, Xiaomu ;

Gan, Xuetao .

CHINESE PHYSICS B, 2018, 27 (12)

[19] Schottky barrier heights for Au and Pd contacts to MoS2 [J].

Kaushik, Naveen ;

Nipane, Ankur ;

Basheer, Firdous ;

Dubey, Sudipta ;

Grover, Sameer ;

Deshmukh, Mandar M. ;

Lodha, Saurabh .

APPLIED PHYSICS LETTERS, 2014, 105 (11)

[20] Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range [J].

Kita, Tomohiro ;

Tang, Rui ;

Yamada, Hirohito .

APPLIED PHYSICS LETTERS, 2015, 106 (11)

← 1 2 3 4 5 →