High-responsivity MoS2 hot-electron telecom-band photodetector integrated with microring resonator

被引：16

作者：

Zhang, Qiao ^{[1
,2
]}

Ji, Yingke ^{[1
,2
]}

Hu, Siqi ^{[1
,2
]}

Li, Zhiwen ^{[1
,2
]}

Li, Chen ^{[1
,2
]}

Gu, Linpeng ^{[1
,2
]}

Tian, Ruijuan ^{[1
,2
]}

Zhang, Jiachen ^{[1
,2
]}

Fang, Liang ^{[1
,2
]}

Zhao, Bijun ^{[1
,2
]}

Zhao, Jianlin ^{[1
,2
]}

Gan, Xuetao ^{[1
,2
]}

机构：

[1] Northwestern Polytech Univ, Sch Phys Sci & Technol, Key Lab Light Field Manipulat & Informat Acquisit, Minist Ind & Informat Technol, Xian 710129, Peoples R China

[2] Northwestern Polytech Univ, Sch Phys Sci & Technol, Shaanxi Key Lab Opt Informat Technol, Xian 710129, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 26期

关键词：

LAYER MOS2; PLASMON; SENSITIVITY;

D O I：

10.1063/5.0093147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a high-responsive hot-electron photodetector based on the integration of an Au-MoS2 junction with a silicon nitride microring resonator (MRR) for detecting telecom-band light. The coupling of the evanescent field of the silicon nitride MRR with the Au-MoS2 Schottky junction region enhances the hot-electron injection efficiency. The device exhibits a high responsivity of 154.6 mA W-1 at the wavelength of 1516 nm, and the moderately uniform responsivities are obtained over the wavelength range of 1500-1630 nm. This MRR-enhanced MoS2 hot-electron photodetector offers possibilities for integrated optoelectronic systems. Published under an exclusive license by AIP Publishing.

引用

页数：6

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