Synthesis and Characterization of Benzocyclobutene-Functionalized Photosensitive Siloxane Thermosets

被引:46
作者
Zuo, Xiaobiao [1 ]
Yu, Ruilian [1 ]
Shi, Song [1 ]
Feng, Zhihai [1 ]
Li, Zhongping [1 ]
Yang, Shiyong [2 ]
Fan, Lin [2 ]
机构
[1] Aerosp Res Inst Mat & Proc Technol, Natl Key Lab Adv Funct Composite Mat, Beijing 100076, Peoples R China
[2] Chinese Acad Sci, Inst Chem, Lab Adv Polymer Mat, Beijing 100091, Peoples R China
关键词
benzocyclobutene; dielectric properties; Diels-Alder polymers; high performance polymers; methylphenylsiloxane oligomers; photopolymerization; photosensitive; water absorptions; POLYMER SYNTHESIS; BLOCK-COPOLYMERS; CROSS-LINKING; BISBENZOCYCLOBUTENE;
D O I
10.1002/pola.23668
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Two methylphenylsiloxane monomers with crosslinkable benzocyclobutene functionalities at the terminal positions, 1,1,5,5-dimethyldiphenyl-1,1,5,5-di[2'-(4'-benzocyclobutenyl)vinyl]-3,3-diphenyltrisiloxane (BCB-1) and 1,1,3,3-dimethyl-di-phenyl-1,1,3,3-di[2'-(4'-benzocyclobutenyl)vinyl]disiloxane (BCB-2) were prepared and characterized. By heating the solution of BCB-1 and BCB-2 in mesitylene, two partially polymerized resins of BCB-1B and BCB-2B with high molecular weight were also achieved. The monomers and their oligomers fully cured at temperatures above 250 degrees C. Cured BCB-1 and BCB-2 exhibited high T-g (257 and 383 degrees C) and good thermal stability (T-5% > 472 degrees C both in N-2 and in air). They also demonstrated low dielectric constants (2.69 and 2.66), low dissipation factors (2.36 and 2.23), and low water absorptions (0.20% and 0.17%). Moreover, a negative photosensitive formulation derived from BCB-1B in combination with 2,6-bis(4-azidobenzylidene)-4-methylcyclohexanone (BAC-M) as a photosensitive agent has been developed. The photosensitive composition, BCB-1B containing 5 wt % BAC-M, showed a sensitivity of 550 mJ/cm(2) and a contrast of 1.96 when it was exposed to a 365 nm, light (i-line) and developed with cyclohexanone at 25 degrees C. A fine negative image of 10 mu m line-and-space pattern was also printed in a film which was exposed to 700 mJ/cm(2) of i-line by contact-printing mode. The negative image can be maintained without any pattern deformation in the curing process. (C) 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 6246-6258, 2009
引用
收藏
页码:6246 / 6258
页数:13
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