g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

被引：9

作者：

Larsson, M. ^{[1
]}

Nilsson, H. A. ^{[1
]}

Hardtdegen, H. ^{[2
]}

Xu, H. Q. ^{[1
]}

机构：

[1] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden

[2] Res Ctr Julich, JARA, Inst Bio & Nanosyst, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 19期

基金：

瑞典研究理事会;

关键词：

SPIN; GIANT;

D O I：

10.1063/1.3264053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the measurements of the g-factor and the exchange Interaction of electrons in a few-electron lateral quantum dot formed in an InGaAs/InP semiconductor heterostructure. The spin filling sequence of the electron states in the dot is determined by magnetotransport measurements and parallel spin filling configurations are Identified The measured g-factor (for a magnetic field applied parallel to the InGaAs quantum layer) has it Value in the range of vertical bar g*vertical bar approximate to 2 to vertical bar g*vertical bar approximate to 4 and is strongly level-dependent. By analysis of the energies of the states which favor a parallel spin filling. the lower bound of the exchange energy of electrons in the clot in the order of similar to 210 mu eV is extracted. (C) 2009 American Institute of Physics. [doi.10.1063/1.3264053]

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页数：3

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