Pressure effects on the donor binding energy in zinc-blende InGaN/GaN quantum dot

被引：5

作者：

Xia, Congxin ^{[1
]}

Wang, Tianxing ^{[1
]}

Wei, Shuyi ^{[1
]}

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453007, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 46卷 / 06期

关键词：

Quantum dot; Hydrogenic impurity; Donor binding energy; LOCALIZED EXCITONS; IMPURITY STATES; WELLS;

D O I：

10.1016/j.spmi.2009.08.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on the effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of the hydrogenic impurity in zinc-blende (ZB) InGaN/GaN quantum dot (QD) are investigated by means of a variational procedure. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD structure parameter. Moreover, it is found that the hydrostatic pressure has a remarkable influence on the donor binding energy of the hydrogenic impurity located at the vicinity of dot center in ZB InGaN/GaN QD. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：840 / 845

页数：6

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