Investigation of inhomogeneous in-plane strain relaxation in Si/SiGe quantum wires by high resolution x-ray diffraction

被引：0

作者：

Zhuang, Y ^{[1
]}

Schelling, C ^{[1
]}

Roch, T ^{[1
]}

Daniel, A ^{[1
]}

Schäffler, F ^{[1
]}

Bauer, G ^{[1
]}

Grenzer, J ^{[1
]}

Pietsch, U ^{[1
]}

Sent, S ^{[1
]}

机构：

[1] Univ Linz, Inst Halbleiterphys, A-4040 Linz, Austria

来源：

APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE V | 2000年 / 590卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural properties of Si/SiGe quantum wires, which were grown by local solid source molecular beam epitaxy through a Si3N4/SiO2 wire-like shadow mask, were investigated by means of high resolution x-ray coplanar and x-ray grazing incidence diffraction,as well as by transmission electron microscopy. High resolution x-ray coplanar diffraction was used to obtain the average in-plane strain in Si/SiGe wires before and after removing the Si3N4/SiO2 shadow mask. X-ray grazing incidence diffraction measurements were performed to obtain information on the shape of the wires and on the depth-dependent strain relaxation. A finite element method was used to calculate the strain distribution in the Si/SiGe wires and in the Si substrate which clearly show the influence of the Si3N4/SiO2 shadow masks on the strain status of the Si/SiGe wires in agreement with the experimental data.

引用

页码：207 / 212

页数：6

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