Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing (vol 311, pg 3273, 2009)

被引：0
|
作者：
Zeng, Yuheng [1 ]
Chen, Jiahe [1 ]
Ma, Miangyang [1 ]
Wang, Weiyan [1 ]
Yang, Deren [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 05期
关键词：
D O I：
10.1016/j.jcrysgro.2010.01.012
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：734 / 734
页数：1
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