High brightness GaN vertical light emitting diodes on metal alloyed substrate for general lighting application

被引：21

作者：

Tran, Chuong Anh

Chu, Chen-Fu

Cheng, Chao-Chen

Liu, Wen-Huan

Chu, Jiunn-Yi

Cheng, Hao-Chun

Fan, Feng-Hsu

Yen, Jui-Kang

Doan, Trung

机构：

[1] SemiLEDs Corp, Milpitas, CA 95035 USA

[2] Semi Photon, Hsinchu, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷

关键词：

electroluminescence; III-V semiconductor-to-semiconductor contacts; p-n junctions; heterojunctions;

D O I：

10.1016/j.jcrysgro.2006.10.187

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The characteristics of the GaN-based vertical light emitting diodes on metal alloyed substrate (VLEDMS) were investigated. The VLEDMS exhibits very good current-voltage behaviour with low serial dynamic resistance of 0.7 Omega and low operated voltage of 3.2 V at 350 mA. High current operation up to 3 A in continuous mode was demonstrated without any performance deterioration. The high thermal conductivity of metal alloyed substrate exhibits excellent heat dissipation capability. Chip scaling without efficiency loss shows a unique property of VLEDMS. A light output efficiency of 70 lumens/W or better was achieved in single chip or multiple chips package. Coupled with good reliability and mass production ability, VLEDMS is very suitable for general lighting application. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：722 / 724

页数：3

共 3 条

[1] Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J].