Electric-field effect on the spin-dependent resonance tunneling

被引：15
作者：
Alekseev, P. S.
Chistyakov, V. M.
Yassievich, I. N.
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] St Petersburg State Tech Univ, St Petersburg 195251, Russia
来源：
SEMICONDUCTORS | 2006年 / 40卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
73.40.Gk; 73.43.Jn; 85.30.Mn; 85.75.Mm;
D O I：
10.1134/S1063782606120062
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A theory of spin-dependent resonance tunneling through a double-barrier heterostructure in the presence of an electric field is developed. Spin-orbit interaction is taken into account by introducing the Dresselhaus term into the effective Hamiltonian. The possibility of fabricating the spin detectors and injectors based on a GaAlSb nonmagnetic semiconductor heterostructure controlled by electric field is analyzed.
引用
收藏
页码：1402 / 1408
页数：7
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