共 50 条
- [22] New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers IEEE 2000 TENCON PROCEEDINGS, VOLS I-III: INTELLIGENT SYSTEMS AND TECHNOLOGIES FOR THE NEW MILLENNIUM, 2000, : B29 - B34
- [24] Effect of Drift Region Resistance on Temperature Characteristics of RF Power LDMOS Transistors 2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 443 - 446
- [25] An Extrinsic Component Parameter Extraction Method for High Power RF LDMOS Transistors 2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 605 - +
- [26] A Nonlinear Electro-Thermal Model for High Power RF LDMOS Transistors 2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 474 - 477
- [28] Bias Circuit Design of RF Power Amplifiers for TDD Systems 2011 INTERNATIONAL CONFERENCE ON ELECTRONICS, COMMUNICATIONS AND CONTROL (ICECC), 2011, : 2572 - 2575
- [29] A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers 12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, : 137 - 140