Chemical interactions of thiophene with ZnO and Al-doped ZnO thin films

被引：1

作者：

Fouts, J. A. ^{[1
]}

Fowler, B. ^{[1
]}

Shiller, P. J. ^{[1
]}

Doll, G. L. ^{[1
]}

机构：

[1] Univ Akron, Timken Engn Surfaces Labs, Akron, OH 44325 USA

来源：

SURFACE & COATINGS TECHNOLOGY | 2017年 / 314卷

关键词：

Magnetron sputtering; Atomic layer deposition; Electrochemical deposition; Sensors; Sulfur; EFFECTIVE CORE POTENTIALS; VAPOR-PHASE EPITAXY; MOLECULAR CALCULATIONS; NANORODS; GROWTH; DEPOSITION; SUBSTRATE; NANOWIRES; MECHANISM; QUALITY;

D O I：

10.1016/j.surfcoat.2016.11.107

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, ZnO and Al-doped ZnO films have been synthesized by five different deposition methods. Electrochemical measurements performed on films immersed in S-containing isooctane indicate that the texture and polarity of the surface of the films are key features affecting the adsorption of thiophene molecules. Specifically, ZnO films possessing a large amount of Zn-terminated (002) wurtzite surfaces are observed to be the most sensitive to the concentration of thiophene in isooctane. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：55 / 66

页数：12

共 30 条

[11] Prediction of the structural performances of ZnO nanowires grown on GaAs(001) substrates by metalorganic chemical vapour deposition (MOCVD) [J].

Lee, W ;

Sohn, HG ;

Myoung, JM .

DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 :1245-1248

[12] Reverse micelle-assisted route to control diameters of ZnO nanorods by selecting different precursors [J].

Li, ZQ ;

Xie, Y ;

Xiong, YJ ;

Zhang, R ;

He, W .

CHEMISTRY LETTERS, 2003, 32 (08) :760-761

[13] Growth mechanism and properties of ZnO nanorods synthesized by plasma-enhanced chemical vapor deposition [J].

Liu, X ;

Wu, XH ;

Cao, H ;

Chang, RPH .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (06) :3141-3147

[14] Effect of RF power on optical and electrical properties of ZnO thin film by magnetron sputtering [J].

Lu, YM ;

Hwang, WS ;

Liu, WY ;

Yang, JS .

MATERIALS CHEMISTRY AND PHYSICS, 2001, 72 (02) :269-272

[15] Growth of ZnO nanorods on A-plane (11(2)over-bar-0) sapphire by metal-organic vapor phase epitaxy [J].

Maejima, K ;

Ueda, M ;

Fujita, S ;

Fujita, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (5A) :2600-2604

[16] CONTRACTED GAUSSIAN-BASIS SETS FOR MOLECULAR CALCULATIONS .1. 2ND ROW ATOMS, Z=11-18 [J].

MCLEAN, AD ;

CHANDLER, GS .

JOURNAL OF CHEMICAL PHYSICS, 1980, 72 (10) :5639-5648

[17] Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy [J].

Ogata, K ;

Maejima, K ;

Fujita, S ;

Fujita, S .

JOURNAL OF CRYSTAL GROWTH, 2003, 248 :25-30

[18] ZnO Devices and Applications: A Review of Current Status and Future Prospects [J].

Ozgur, Umit ;

Hofstetter, Daniel ;

Morkoc, Hadis .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1255-1268

[19] ZnO nanoneedles grown vertically on Si substrates by non-catalytic vapor-phase epitaxy [J].

Park, WI ;

Yi, GC ;

Kim, MY ;

Pennycook, SJ .

ADVANCED MATERIALS, 2002, 14 (24) :1841-1843

[20] Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods [J].

Park, WI ;

Kim, DH ;

Jung, SW ;

Yi, GC .

APPLIED PHYSICS LETTERS, 2002, 80 (22) :4232-4234

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