Chemical interactions of thiophene with ZnO and Al-doped ZnO thin films

被引：1

作者：

Fouts, J. A. ^{[1
]}

Fowler, B. ^{[1
]}

Shiller, P. J. ^{[1
]}

Doll, G. L. ^{[1
]}

机构：

[1] Univ Akron, Timken Engn Surfaces Labs, Akron, OH 44325 USA

来源：

SURFACE & COATINGS TECHNOLOGY | 2017年 / 314卷

关键词：

Magnetron sputtering; Atomic layer deposition; Electrochemical deposition; Sensors; Sulfur; EFFECTIVE CORE POTENTIALS; VAPOR-PHASE EPITAXY; MOLECULAR CALCULATIONS; NANORODS; GROWTH; DEPOSITION; SUBSTRATE; NANOWIRES; MECHANISM; QUALITY;

D O I：

10.1016/j.surfcoat.2016.11.107

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, ZnO and Al-doped ZnO films have been synthesized by five different deposition methods. Electrochemical measurements performed on films immersed in S-containing isooctane indicate that the texture and polarity of the surface of the films are key features affecting the adsorption of thiophene molecules. Specifically, ZnO films possessing a large amount of Zn-terminated (002) wurtzite surfaces are observed to be the most sensitive to the concentration of thiophene in isooctane. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：55 / 66

页数：12

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