Chemical interactions of thiophene with ZnO and Al-doped ZnO thin films

被引：1
|
作者：
Fouts, J. A. [1 ]
Fowler, B. [1 ]
Shiller, P. J. [1 ]
Doll, G. L. [1 ]
机构：
[1] Univ Akron, Timken Engn Surfaces Labs, Akron, OH 44325 USA
来源：
SURFACE & COATINGS TECHNOLOGY | 2017年 / 314卷
关键词：
Magnetron sputtering; Atomic layer deposition; Electrochemical deposition; Sensors; Sulfur; EFFECTIVE CORE POTENTIALS; VAPOR-PHASE EPITAXY; MOLECULAR CALCULATIONS; NANORODS; GROWTH; DEPOSITION; SUBSTRATE; NANOWIRES; MECHANISM; QUALITY;
D O I：
10.1016/j.surfcoat.2016.11.107
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, ZnO and Al-doped ZnO films have been synthesized by five different deposition methods. Electrochemical measurements performed on films immersed in S-containing isooctane indicate that the texture and polarity of the surface of the films are key features affecting the adsorption of thiophene molecules. Specifically, ZnO films possessing a large amount of Zn-terminated (002) wurtzite surfaces are observed to be the most sensitive to the concentration of thiophene in isooctane. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：55 / 66
页数：12
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