Absolute energy level positions in tin-and lead-based halide perovskites

被引:522
作者
Tao, Shuxia [1 ]
Schmidt, Ines [2 ]
Brocks, Geert [1 ,3 ,4 ]
Jiang, Junke [1 ]
Tranca, Ionut [5 ]
Meerholz, Klaus [2 ]
Olthof, Selina [2 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, Ctr Computat Energy Res, POB 513, NL-5600 MB Eindhoven, Netherlands
[2] Univ Cologne, Dept Chem, Luxemburger Str 116, D-50939 Cologne, Germany
[3] Univ Twente, Computat Mat Sci, Fac Sci & Technol, POB 217, NL-7500 AE Enschede, Netherlands
[4] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands
[5] Eindhoven Univ Technol, Dept Mech Engn, Energy Technol, NL-5600 MB Eindhoven, Netherlands
关键词
PLANE-WAVE; ELECTRONIC-STRUCTURE; PHASE-TRANSITIONS; EFFICIENT; STOICHIOMETRY; CH3NH3PBBR3; MANAGEMENT; DESIGN; COHP;
D O I
10.1038/s41467-019-10468-7
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Metal halide perovskites are promising materials for future optoelectronic applications. One intriguing property, important for many applications, is the tunability of the band gap via compositional engineering. While experimental reports on changes in absorption or photoluminescence show rather good agreement for different compounds, the physical origins of these changes, namely the variations in valence and conduction band positions, are not well characterized. Here, we determine ionization energy and electron affinity values of all primary tin- and lead-based perovskites using photoelectron spectroscopy data, supported by first-principles calculations and a tight-binding analysis. We demonstrate energy level variations are primarily determined by the relative positions of the atomic energy levels of metal cations and halide anions and secondarily influenced by the cation-anion interaction strength. These results mark a significant step towards understanding the electronic structure of this material class and provides the basis for rational design rules regarding the energetics in perovskite optoelectronics.
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页数:10
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