Low-temperature poly-Si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric

被引：6

作者：

Chang, KM ^{[1
]}

Yang, WC

Hung, BF

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 07期

关键词：

D O I：

10.1149/1.1753253

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with oxide/nitride/oxynitride (ONO) multilayer gate dielectrics were fabricated. The low-temperature (less than or equal to300degreesC) ONO multilayer dielectric uses three stacked layers: the bottom layer is a very thin N2O-plasma oxynitride deposited by plasma-enhanced chemical vapor deposition (PECVD), the middle layer is PECVD Si3N4, and the top layer is tetraethoxysilane (TEOS) oxide. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time-dependent dielectric breakdown lifetime and a lower charge trapping rate than single-layer PECVD TEOS oxide or nitride. The fabricated poly-Si TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 213 cm(2)/V s, and an ON/OFF current ratio of over 10(8). (C) 2004 The Electrochemical Society.

引用

页码：G148 / G150

页数：3

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