Effect of Al co-doping on the electrical and magnetic properties of Cu-doped ZnO nanorods

被引：32

作者：

Wu, Z. F. ^{[1
]}

Cheng, K. ^{[1
]}

Zhang, F. ^{[2
]}

Guan, R. F. ^{[2
]}

Wu, X. M. ^{[3
]}

Zhuge, L. J. ^{[4
]}

机构：

[1] Yancheng Inst Technol, Dept Basic Sci, Yancheng 224051, Peoples R China

[2] Yancheng Inst Technol, Key Lab Adv Technol Environm Protect Jiangsu Prov, Yancheng 224051, Peoples R China

[3] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China

[4] Soochow Univ, Anal & Testing Ctr, Suzhou 215123, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 615卷

基金：

中国国家自然科学基金;

关键词：

ZnO nanorods; Al and Cu co-doping; Electrical properties; Magnetic properties; OXIDES; GAN;

D O I：

10.1016/j.jallcom.2014.06.204

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the electrical and magnetic properties of Cu-doped ZnO and (Al, Cu) co-doped ZnO nanorods synthesized by the magnetron sputtering technique. Structural analysis indicated that Cu and Al occupied Zn sites and did not change the wurtzite structure of the ZnO nanorods. Magnetic measurements demonstrated that Cu-doped and (Al, Cu) co-doped ZnO nanorods are ferromagnetic at room temperature. Compared with Cu-doped ZnO nanorods, (Al, Cu)-co-doped ZnO nanorods had higher carrier concentrations. Results suggested that (Al, Cu)-co-doped ZnO diluted magnetic semi-conductor nanorods may be applied as an efficient source of polarized spins for injection into devices because of their low resistance and high carrier concentration. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：521 / 525

页数：5

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