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Enhanced room temperature ammonia gas sensing properties of Al-doped ZnO nanostructured thin films
被引:22
作者:
Devi, K. Radhi
[1
]
Selvan, G.
[2
]
Karunakaran, M.
[3
]
Raj, I. Loyola Poul
[4
]
Abd El-Rehim, A. F.
[5
,6
]
Zahran, H. Y.
[5
,6
]
Shkir, Mohd.
[5
]
AlFaify, S.
[5
]
机构:
[1] Sethupathy Govt Arts Coll, PG & Res Dept Phys, Ramanathapuram, India
[2] Thanthai Hans Roever Coll, Dept Phys, Perambalur, India
[3] Alagappa Govt Arts Coll, PG & Res Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[4] Ananda Coll, Dept Phys, Devakottai 630003, India
[5] King Khalid Univ, Fac Sci, Dept Phys, Adv Funct Mat & Optoelect Lab AFMOL, Abha 61413, Saudi Arabia
[6] Ain Shams Univ, Dept Phys, Nanosci Lab Environm & Biomed Applicat NLEBA, Semicond Lab,Fac Educ, Roxy 11757, Egypt
关键词:
Controllable SILAR method;
Al-ZnO thin films;
X-ray diffraction;
Optical properties;
Gas sensor;
IONIC LAYER ADSORPTION;
ELECTRICAL-PROPERTIES;
PERFORMANCE;
SENSORS;
PHOTORESPONSE;
SENSITIVITY;
D O I:
10.1007/s11082-020-02621-0
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this present research work, we report the preparation of successfully synthesized ZnO films as pristine and doped with Al(Al-ZnO) on glass via facile, eco-friendly, and controllable SILAR method. A systematic evolution of structural, surface morphology, composition, photoluminescence and ammonia gas sensing behaviour of the system was investigated with a variation of Al dopant. XRD examination disclosed polycrystalline nature with the hexagonal system of all films and crystallite size was noticed between 37 and 51 nm. EDX study approves the presence of Al doping in ZnO. Surface morphological tests through SEM presented the formation of nanoparticles and nanorods with a variation of Al content. The photoluminescence study revealed that due to Al doping the PL intensity was quenched which signifies the reduction of defects in the films. It was shown that the estimated values of the energy gap are enlarged to 3.12 from 3.01 on rising the Al content till 3wt.% and finally decreased for 5wt.% Al content. The gas sensing analysis showed that Al doping content was made to drastically increase the gas sensing response. Compared with other dopant levels, the 3wt.% Al-ZnO nanorods unveiled the uppermost retort when tested to 100 ppm ammonia (NH3) gas concentration at room temperature.
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页数:19
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