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- [5] SiO2 etching characteristics with low-energy ions generated by electron cyclotron resonance plasma using CF4 and NF3 gases Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (6 B): : 1987 - 1992
- [6] SIO2 ETCHING CHARACTERISTICS WITH LOW-ENERGY IONS GENERATED BY ELECTRON-CYCLOTRON RESONANCE PLASMA USING CF4 AND NF3 GASES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6B): : 1987 - 1992