INITIO MOLECULAR-DYNAMICS;
LITHIUM SECONDARY BATTERIES;
TOTAL-ENERGY CALCULATIONS;
WAVE BASIS-SET;
AB-INITIO;
ION BATTERIES;
ELECTRICAL-RESISTIVITY;
NEGATIVE ELECTRODE;
SILICON SYSTEM;
ANODE MATERIAL;
D O I:
10.1063/1.4975764
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
We have performed a comparative first-principles study on the structural and electronic properties of the liquid Li1-xSix and Li1-xGex alloys over a range of composition from x = 0.09 to 0.50. Our calculations showed that Si and Ge atoms can exhibit very distinct local bonding characteristics as they were alloyed with the Li atoms in the liquid state, where Si atoms tended to form a variety of covalent bonding configurations while Ge atoms predominantly appeared as the isolated anions in the liquid alloys. These differences in bonding characteristics were reflected in their electronic density of states, in which the liquid Li1-xGex alloys have a lower degree of s-p hybridization with narrower distributions of the 3s and 3p states than the liquid Li1-xSix alloys. Our calculations also showed that the optical conductivities of these two liquid alloys can undergo a transition from the Drude-like metallic nature to the semiconductor-like character as the Si/Ge content increases from 0.09 to 0.22. However, as the Si/Ge content further increases to 0.50, the liquid Li1-xGex alloys may transit to exhibit the Drude-like metallic nature, while the liquid Li1-xSix alloys can still hold the semiconductor-like character. Moreover, our calculations revealed that the dc conductivities of these liquid alloys are predominantly determined by the number of total electronic states at the Fermi level. As the liquid Li1-xSix alloys are within the composition range between 0.20 and 0.50, the increment of the states at the Fermi level with increasing the Si content is nearly identical to the amount of the Li states decreased, leading to an almost unchanged number of total electronic states at the Fermi level. However, since Ge atoms do not favor forming covalent bonding in the liquid alloys to keep the Fermi level at a minimum of the density of states, the liquid Li1-xGex alloys would have more electronic states at the Fermi level and thereby higher dc conductivities than the liquid Li1-xSix alloys within the same composition range. Published by AIP Publishing.
机构:
Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R ChinaShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Wang, Su-Fang
Zhang, Yan
论文数: 0引用数: 0
h-index: 0
机构:
Ecole Cent Paris, CNRS, UMR8580, Lab Struct Proprietes & Modelisat Solides, F-92295 Chatenay Malabry, FranceShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Zhang, Yan
Chen, Li-Yong
论文数: 0引用数: 0
h-index: 0
机构:
Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R ChinaShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Chen, Li-Yong
Zhang, Jian-Min
论文数: 0引用数: 0
h-index: 0
机构:
Shaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R ChinaShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Zhang, Jian-Min
Xu, Ke-Wei
论文数: 0引用数: 0
h-index: 0
机构:
Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R ChinaShaanxi Normal Univ, Coll Phys & Informat Technol, Xian 710062, Shaanxi, Peoples R China
Xu, Ke-Wei
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
2011,
208
(01):
: 97
-
103
机构:
Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Hainan Univ, Coll Mat & Chem Engn, Haikou 570228, Peoples R China
Hainan Prov Key Lab Res Utilizat Si Zr Ti Resourc, Haikou 570228, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Li Jin
Linghu Rong-Feng
论文数: 0引用数: 0
h-index: 0
机构:
Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Guizhou Normal Univ, Sch Phys & Elect Sci, Guiyang 550001, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Linghu Rong-Feng
Yang Ze-Jin
论文数: 0引用数: 0
h-index: 0
机构:
Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Yang Ze-Jin
Cao Yang
论文数: 0引用数: 0
h-index: 0
机构:
Hainan Univ, Coll Mat & Chem Engn, Haikou 570228, Peoples R China
Hainan Prov Key Lab Res Utilizat Si Zr Ti Resourc, Haikou 570228, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Cao Yang
Yang Xiang-Dong
论文数: 0引用数: 0
h-index: 0
机构:
Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
机构:
Kim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North KoreaKim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North Korea
Jong, Un-Gi
Yu, Chol-Jun
论文数: 0引用数: 0
h-index: 0
机构:
Kim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North KoreaKim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North Korea
Yu, Chol-Jun
Kye, Yun-Hyok
论文数: 0引用数: 0
h-index: 0
机构:
Kim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North KoreaKim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North Korea
Kye, Yun-Hyok
Choe, Yong-Guk
论文数: 0引用数: 0
h-index: 0
机构:
Kim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North KoreaKim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North Korea
Choe, Yong-Guk
Hao, Wei
论文数: 0引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, SingaporeKim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North Korea
Hao, Wei
Li, Shuzhou
论文数: 0引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Mat Sci & Engn, Nanyang Ave, Singapore 639798, SingaporeKim II Sung Univ, Fac Mat Sci, Chair Computat Mat Design, Taesong Dist, Pyongyang, North Korea