INITIO MOLECULAR-DYNAMICS;
LITHIUM SECONDARY BATTERIES;
TOTAL-ENERGY CALCULATIONS;
WAVE BASIS-SET;
AB-INITIO;
ION BATTERIES;
ELECTRICAL-RESISTIVITY;
NEGATIVE ELECTRODE;
SILICON SYSTEM;
ANODE MATERIAL;
D O I:
10.1063/1.4975764
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
We have performed a comparative first-principles study on the structural and electronic properties of the liquid Li1-xSix and Li1-xGex alloys over a range of composition from x = 0.09 to 0.50. Our calculations showed that Si and Ge atoms can exhibit very distinct local bonding characteristics as they were alloyed with the Li atoms in the liquid state, where Si atoms tended to form a variety of covalent bonding configurations while Ge atoms predominantly appeared as the isolated anions in the liquid alloys. These differences in bonding characteristics were reflected in their electronic density of states, in which the liquid Li1-xGex alloys have a lower degree of s-p hybridization with narrower distributions of the 3s and 3p states than the liquid Li1-xSix alloys. Our calculations also showed that the optical conductivities of these two liquid alloys can undergo a transition from the Drude-like metallic nature to the semiconductor-like character as the Si/Ge content increases from 0.09 to 0.22. However, as the Si/Ge content further increases to 0.50, the liquid Li1-xGex alloys may transit to exhibit the Drude-like metallic nature, while the liquid Li1-xSix alloys can still hold the semiconductor-like character. Moreover, our calculations revealed that the dc conductivities of these liquid alloys are predominantly determined by the number of total electronic states at the Fermi level. As the liquid Li1-xSix alloys are within the composition range between 0.20 and 0.50, the increment of the states at the Fermi level with increasing the Si content is nearly identical to the amount of the Li states decreased, leading to an almost unchanged number of total electronic states at the Fermi level. However, since Ge atoms do not favor forming covalent bonding in the liquid alloys to keep the Fermi level at a minimum of the density of states, the liquid Li1-xGex alloys would have more electronic states at the Fermi level and thereby higher dc conductivities than the liquid Li1-xSix alloys within the same composition range. Published by AIP Publishing.
机构:
Inst Politecn Nacl, ESIME Culhuacan, Ave Santa Ana 1000, Mexico City 04440, MexicoUniv Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
Ornelas-Cruz, I.
Pilo, J.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Nacl Autonoma Mexico, Fac Ciencias, AP 70-399, Mexico City 04510, MexicoUniv Nacl Autonoma Mexico, Inst Energias Renovables, Temixco 62580, Morelos, Mexico
机构:
Lawrence Berkeley Natl Lab, Energy Storage & Distributed Resources Div, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Mat Sci, Berkeley, CA 94720 USALawrence Berkeley Natl Lab, Energy Storage & Distributed Resources Div, Berkeley, CA 94720 USA
Sivonxay, Eric
Aykol, Muratahan
论文数: 0引用数: 0
h-index: 0
机构:
Lawrence Berkeley Natl Lab, Energy Storage & Distributed Resources Div, Berkeley, CA 94720 USA
Toyota Res Inst, Los Altos, CA 94022 USALawrence Berkeley Natl Lab, Energy Storage & Distributed Resources Div, Berkeley, CA 94720 USA
Aykol, Muratahan
Persson, Kristin A.
论文数: 0引用数: 0
h-index: 0
机构:
Lawrence Berkeley Natl Lab, Energy Storage & Distributed Resources Div, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Mat Sci, Berkeley, CA 94720 USALawrence Berkeley Natl Lab, Energy Storage & Distributed Resources Div, Berkeley, CA 94720 USA
机构:
S China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R China
Guangdong Univ Technol, Sch Phys, Guangzhou 510090, Guangdong, Peoples R ChinaS China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R China
Lin, Zhiping
Zhao, Yu-Jun
论文数: 0引用数: 0
h-index: 0
机构:
S China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R ChinaS China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R China
Zhao, Yu-Jun
Zhao, Yanming
论文数: 0引用数: 0
h-index: 0
机构:
S China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R ChinaS China Univ Technol, Dept Phys, Guangzhou 510640, Peoples R China