One-Dimensional Quantum Wire Formed at the Boundary between Two Insulating LaAlO3/SrTiO3 Interfaces

被引：35

作者：

Ron, A. ^{[1
]}

Dagan, Y. ^{[1
]}

机构：

[1] Tel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, Israel

来源：

PHYSICAL REVIEW LETTERS | 2014年 / 112卷 / 13期

基金：

美国国家科学基金会;

关键词：

HIGH-MOBILITY; FERROMAGNETISM; CONDUCTANCE; SUPERCONDUCTIVITY; COEXISTENCE;

D O I：

10.1103/PhysRevLett.112.136801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We grow a tiled structure of insulating two-dimensional LaAlO3/SrTiO3 interfaces composed of alternating one and three LaAlO3 unit cells. The boundary between two tiles is conducting. At low temperatures this conductance exhibits quantized steps as a function of gate voltage indicative of a one-dimensional channel. The step size of half the quantum of conductance is evidence for the absence of spin degeneracy.

引用

页数：4

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