Raman scattering analysis of SiH bond stretching modes in hydrogenated microcrystalline silicon for use in thin-film photovoltaics

被引：28

作者：

Johnson, E. V. ^{[1
]}

Kroely, L. ^{[1
]}

Roca i Cabarrocas, P. ^{[1
]}

机构：

[1] Ecole Polytech, CNRS, LPICM, F-91128 Palaiseau, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 10期

关键词：

Microcrystalline silicon; Thin-film silicon; Hydrogen; Raman; FTIR; PECVD; Microstructure; INFRARED-ABSORPTION; TEMPERATURES; PLASMA;

D O I：

10.1016/j.solmat.2009.06.018

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The presence of a pair of peaks in the high wavenumber infrared (IR) absorption region of hydrogenated microcrystalline silicon (mu c-Si:H) has been recently proposed as a strong indicator of poor quality material that is prone to oxidation and is therefore unsuitable for thin-film, photovoltaic applications. In this work, we show that these peaks located at 2083 and 2100cm(-1) are also present in the Raman scattering spectra of mu c-Si:H and therefore can be directly measured on substrates that are suitable for solar cells. We present results for material grown by matrix-distributed electron-cyclotron resonance (MD-ECR) plasma-enhanced chemical vapour deposition (PECVD) on both crystalline silicon and borosilicate glass substrates. The narrow, twinned peaks detected by Raman disappear with time-presumably due to oxidation-although a broad peak at 2100cm(-1) remains. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1904 / 1906

页数：3

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