Atomic structure at the Si(001)-SiO2 interface:: from the interpretation of Si 2p core-level shifts to a model structure

被引：8

作者：

Bongiorno, A ^{[1
]}

Pasquarello, A ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, IRRMA, Inst Romand Rech Numer Phys Mat, CH-1015 Lausanne, Switzerland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 96卷 / 02期

关键词：

Si-SiO2; interface; photoemission modeling;

D O I：

10.1016/S0921-5107(02)00299-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

After assessing the current status concerning the interpretation of Si 2p core-level shifts in Si-O systems, we model the atomic structure of the Si(001)-SiO2 interface using recent photoemission data obtained with synchrotron radiation. Our model structure reproduces the amount, the distribution, and the location of silicon atoms in intermediate states of oxidation. Our model also shows a SiO2 density in the neighborhood of the interface consistent with X-ray reflectivity measurements. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：102 / 106

页数：5

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