The post-treatment effects on open circuit voltages and device performances in a high efficiency all-small-molecule organic solar cell

被引:23
作者
Zhang, Ziqi [1 ,2 ]
Wu, Qiong [1 ,2 ]
Deng, Dan [1 ]
Wu, Sihua [1 ,2 ]
Sun, Rui [3 ]
Min, Jie [3 ]
Zhang, Jianqi [1 ]
Wei, Zhixiang [1 ,2 ]
机构
[1] CAS Ctr Excellence Nanosci, Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Wuhan Univ, Inst Adv Studies, Wuhan 430072, Peoples R China
基金
中国国家自然科学基金;
关键词
THIN-FILMS; POLYMER;
D O I
10.1039/d0tc03043k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Post-treatment is a widely used approache to improve the device performance of all-small-molecule organic solar cells (ASM-OSCs), which leads to a balanced miscibility and crystallinity of the active layers. However, compared to as-cast devices, their efficiency is notably improved but normally accompanied with big open circuit voltage (V-oc) loss after thermal annealing (TA) or solvent vapor annealing (SVA), which limits further breakthrough of the device performance and lacks investigation. In this manuscript, we design a novel molecule BSCl with a deep HOMO energy level and a good molecular assembling ability. Using IDIC-4Cl as an acceptor and combining TA and SVA, a PCE of 13.03% was achieved. The device improvements, film formation and V-oc variations during the post-treatment methods were deeply investigated via Grazing incidence wide angle X-ray scattering and energy loss characterization. The characterization results illustrated that the decreased V-oc during TA should be mainly due to the decreased E-CT accompanied with a larger Delta Vnon-rad, which is further ascribed to their upshifts in the HOMO energy levels. The V-oc could be partly recovered after further SVA. Our results signify the importance of the shifts in the band-gap, E-CT, and ultimately the energy levels during the post-treatment methods, providing useful guidance on high efficiency molecule optimization and a deep understanding on the energy loss investigation and film formation via device optimization.
引用
收藏
页码:15385 / 15392
页数:8
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