Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation

被引：12

作者：

Hayashi, Shohei ^{[1
]}

Morisaki, Seiji ^{[1
]}

Kamikura, Takahiro ^{[1
]}

Yamamoto, Shogo ^{[1
]}

Sakaike, Kohei ^{[1
]}

Akazawa, Muneki ^{[1
]}

Higashi, Seiichiro ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Integrat Sci, Higashihiroshima, Hiroshima 7398530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 03期

基金：

日本学术振兴会;

关键词：

SOLID-PHASE CRYSTALLIZATION; EXCIMER-LASER CRYSTALLIZATION; POLY-SI TFTS; THIN-FILMS; LATERAL CRYSTALLIZATION; TRANSISTORS; GROWTH;

D O I：

10.7567/JJAP.53.03DG02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous silicon (a-Si) films were crystallized using three grain growth modes induced by micro-thermal-plasma-jet (mu-TPJ) irradiation and applied to the channel regions of thin-film transistors (TFTs). Solid phase crystallization (SPC) formed microcrystalline grains and showed a lower crystallinity of 70%, whereas leading wave crystallization (LWC) and high-speed lateral crystallization (HSLC) formed significantly larger grains than the TFT channel region. The SPC-TFT showed a lower field-effect mobility (mu(FE)) due to the small grain size and the existence of many grain boundaries, whereas LWC- and HSLC-TFT channels were formed by only single grains and showed a mu(FE) higher than 300cm(2)V(-1)s(-1) in the n-channel. The defect density of HSLC was smaller than that of LWC; consequently, the HSLC-TFT performed better than the LWC-TFT. The maximum mu(FE) values of n-and p-channel HSLC-TFTs were 418 and 224cm(2)V(-1)s(-1), respectively. (C) 2014 The Japan Society of Applied Physics

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页数：6

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