5-10 GHZ ALN CONTOUR-MODE NANOELECTROMECHANICAL RESONATORS

被引：89

作者：

Rinaldi, M. ^{[1
]}

Zuniga, C. ^{[1
]}

Piazza, G. ^{[1
]}

机构：

[1] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA

来源：

IEEE 22ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2009) | 2009年

基金：

美国国家科学基金会;

关键词：

FREQUENCY;

D O I：

10.1109/MEMSYS.2009.4805533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the design and experimental verification of Super High Frequency (SHF) laterally vibrating NanoElctroMechanical (NEMS) resonators. For the first time, AlN piezoelectric nanoresonators with multiple frequencies of operation ranging between 5 and 10 GHz have been fabricated on the same chip and attained the highest f-Q product (similar to 4.6. 10(12) Hz) ever reported in AlN contour-mode devices. These piezoelectric NEMS resonators are the first of their class to demonstrate on-chip sensing and actuation of nanostructures without the need of cumbersome or power consuming excitation and readout systems. Effective piezoelectric activity has been demonstrated in thin AlN films having vertical and lateral features in the range of 250 nm.

引用

页码：916 / 919

页数：4

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