Rapid crystallization of silicon films using pulsed current-induced joule heating

被引：3

作者：

Sameshima, T ^{[1
]}

Kaneko, Y ^{[1
]}

Andoh, N ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01109-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crystallization of silicon films formed on glass substrates was achieved by rapid-joule heating of Cr strips adjacently formed via 200-nm-thick SiO2 intermediate layers. 3-mus-pulsed voltages applied to the Cr strips caused a high joule heating intensity about 1 x 10(6) W/cm(2). Transmission electron microscopy measurements confirmed a crystalline grain size of 50-100 nm, 1-mum-long crystalline grain growth was observed just beneath of the edge of Cr strips. The activation of phosphorus atoms according to crystallization was also achieved. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：746 / 750

页数：5

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