Optical and field emission properties of layer-structure GaN nanowires

被引：30

作者：

Cui, Zhen ^{[1
,2
]}

Li, Enling ^{[1
]}

Shi, Wei ^{[1
]}

Ma, Deming ^{[1
]}

机构：

[1] Xian Univ Technol, Sch Sci, Xian 710048, Peoples R China

[2] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2014年 / 56卷

基金：

中国国家自然科学基金;

关键词：

Nanostructures; Optical materials; Crystal growth; X-ray diffraction; GROWTH; PHOTOLUMINESCENCE; NANOBELTS;

D O I：

10.1016/j.materresbull.2014.04.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (111) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire's preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/mu m (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：80 / 85

页数：6

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