Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy

被引：21

作者：

Myers, Grant A. ^{[1
]}

Hazra, Siddharth S. ^{[2
]}

de Boer, Maarten P. ^{[2
]}

Michaels, Chris A. ^{[1
]}

Stranick, Stephan J. ^{[1
]}

Koseski, Ryan P. ^{[1
]}

Cook, Robert F. ^{[1
]}

DelRio, Frank W. ^{[1
]}

机构：

[1] NIST, Mat Measurement Lab, Gaithersburg, MD 20899 USA

[2] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 19期

基金：

美国国家科学基金会;

关键词：

SINGLE-CRYSTAL SILICON; THETA-LIKE SPECIMENS; MECHANICAL-PROPERTIES; SURFACE-MORPHOLOGY; POLYSILICON FILMS; FRACTURE STRENGTH; POROUS SILICON; SPECTROSCOPY; MEMBRANES; SIZE;

D O I：

10.1063/1.4878616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations on the scale of the component and on the scale of the microstructure. Finite element analysis models enabled direct comparison of the spatial variation in the measured shifts to that of the predicted stresses. The experimental shifts and model stresses were found to be linearly related in the uniaxial segment, with a proportionality constant in good agreement with calculations based on an opto-mechanical polycrystalline averaging analysis. (C) 2014 AIP Publishing LLC.

引用

页数：5

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