Silicon and SiC MOSFET Electro-Thermal Performance Assessment within Smart Distributed Generation Inverters with Dynamic Reactive Compensation Grid Support for Resilient Microgrids

被引：0
作者：
Lewis, Patrick T. [1 ]
Grainger, Brandon M. [1 ]
Huang, Shimeng [2 ]
机构：
[1] Univ Pittsburgh, Swanson Sch Engn, Dept Elect & Comp Engn, 3700 OHara St, Pittsburgh, PA 15261 USA
[2] ANSYS Inc, Res & Dev Engn, 2600 ANSYS Dr, Canonsburg, PA 15317 USA
来源：
2017 IEEE 18TH WORKSHOP ON CONTROL AND MODELING FOR POWER ELECTRONICS (COMPEL) | 2017年
基金：
美国安德鲁·梅隆基金会;
关键词：
Distributed Generation Inverter; Electro-Thermal Device Modeling; IGBT; Power MOSFET; Reactive Compensation; Reliability; Silicon Carbide; Wide-Bandgap Semiconductors; POWER INJECTION;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
As advanced functionality is being demanded from distributed generation (DG) systems, smart inverters are being developed to provide reactive compensation to provide system support during grid disturbances. This compensation, however, leads to increased semiconductor device stress in the inverter. This work investigates the electro-thermal impacts of inverter grid support upon the longevity of SiC power MOSFET and Si IGBT products. This work is meant to inform the evolving standard development for smart inverter design. All modeling is performed in ANSYS Simplorer.
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页数：6
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