Fabrication of 0.2 mu m hole patterns in KrF excimer laser lithography

被引：2

作者：

Asano, M

Kawano, K

Tanaka, S

Onishi, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 5A期

关键词：

KrF excimer laser lithography; subquarter micron; 1 Gbit DRAM; halftone phase-shifting mask; SiNx; chemically amplified resist; 0.2 mu m hole pattern; resist film; surfactant; 0.15 mu m hole pattern;

D O I：

10.1143/JJAP.36.2640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes the fabrication of 0.2 mu m hole resist patterns in KrF excimer Iaser lithography. BY using a SiNx single-layer halftone phase-shifting mask (PSM) and air in-house chemically amplified positive resist, 0.2 mu m hole resist patterns can be obtained with sufficient depth of focus (DOF), Furthermore, a 0.15 mu m hole resist pattern can also be fabricated by using the PSM.

引用

页码：2640 / 2641

页数：2

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