Fabrication of 0.2 mu m hole patterns in KrF excimer laser lithography

This paper describes the fabrication of 0.2 mu m hole resist patterns in KrF excimer Iaser lithography. BY using a SiNx single-layer halftone phase-shifting mask (PSM) and air in-house chemically amplified positive resist, 0.2 mu m hole resist patterns can be obtained with sufficient depth of focus (DOF), Furthermore, a 0.15 mu m hole resist pattern can also be fabricated by using the PSM.