Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

被引：13

作者：

Taishi, Toshinori ^{[1
]}

Ohno, Yutaka ^{[2
]}

Yonenaga, Ichiro ^{[2
]}

机构：

[1] Shinshu Univ, Fac Engn, Wakasato, Nagano 3808553, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808557, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 393卷

关键词：

Doping; Segregation; Constitutional supercooling; Czochralski method; Semiconducting silicon; SILICON;

D O I：

10.1016/j.jcrysgro.2013.10.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling. (C) 2013 Elsevier By. All rights reserved.

引用

页码：42 / 44

页数：3

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