Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

被引:137
作者
Gundiah, G
Madhav, GV
Govindaraj, A
Seikh, MM
Rao, CNR
机构
[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, CSIR, Ctr Excellence Chem, Bangalore 560064, Karnataka, India
关键词
D O I
10.1039/b200161f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain beta-SiC nanowires involves heating silica gel with activated carbon at 1360 degreesC in H-2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200 degreesC gives alpha-Si3N4 nanowires and Si2N2O nanowires at 1100 degreesC. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360 degreesC in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields alpha-Si3N4 nanowires in pure form.
引用
收藏
页码:1606 / 1611
页数:6
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