Growth and ferroelectric properties of sol-gel derived Bi(Mg1/2Zr1/2)O3-PbTiO3 thin films

The electrical properties included temperature-dependent polarization of (1-x)Bi(Mg1/2Zr1/2)O-3-PbTiO3 (BMZ-xPT) new ferroelectric films were investigated. The films with 220 nm thickness grown on Pt(111)/Ti/SiO2/Si substrates via sol gel method were well crystallized with a phase-pure perovslcite structure and homogeneous microstructure. Saturated polarization hysteresis loops are observed for all BMZ xPT compounds, and BMZ-0.85PT films with high (100) orientation show a small leakage and remanent polarization of 36.1 mu C cm(-2), which is comparable to the (100)-oriented BiScO3 PbTiO3 thin films. The present films have high dielectric constants about 544-833. Furthermore, the polarization with elevated temperature slightly decreases, exhibiting stable ferroelectric properties and potentials for memory applications above room temperature such as non-volatile ferroelectric random access memories. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.