Growth and ferroelectric properties of sol-gel derived Bi(Mg1/2Zr1/2)O3-PbTiO3 thin films

被引：3
作者：
Zhang, Linxing [1 ]
Chen, Jun [1 ,3 ]
Yin, Lu [2 ]
Zhao, Hanqing [1 ]
Fan, Longlong [1 ]
Cao, Jiangli [2 ]
Xing, Xianran [1 ,3 ]
机构：
[1] Univ Sci & Technol Beijing, Dept Phys Chem, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, Inst Adv Mat & Technol, Beijing 100083, Peoples R China
[3] Univ Sci & Technol Beijing, State Key Lab Adv Met, Beijing 100083, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2014年 / 40卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Films; Sol-gel processes; Dielectric properties; Electrical properties; Ferroelectric properties;
D O I：
10.1016/j.ceramint.2013.09.120
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties included temperature-dependent polarization of (1-x)Bi(Mg1/2Zr1/2)O-3-PbTiO3 (BMZ-xPT) new ferroelectric films were investigated. The films with 220 nm thickness grown on Pt(111)/Ti/SiO2/Si substrates via sol gel method were well crystallized with a phase-pure perovslcite structure and homogeneous microstructure. Saturated polarization hysteresis loops are observed for all BMZ xPT compounds, and BMZ-0.85PT films with high (100) orientation show a small leakage and remanent polarization of 36.1 mu C cm(-2), which is comparable to the (100)-oriented BiScO3 PbTiO3 thin films. The present films have high dielectric constants about 544-833. Furthermore, the polarization with elevated temperature slightly decreases, exhibiting stable ferroelectric properties and potentials for memory applications above room temperature such as non-volatile ferroelectric random access memories. (C) 2013 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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收藏
页码：6307 / 6310
页数：4
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