Role of surface diffusion processes during bias-enhanced nucleation of diamond on Si

被引：10
|
作者：
Gerber, J [1 ]
Robertson, J [1 ]
Sattel, S [1 ]
Ehrhardt, H [1 ]
机构：
[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND
来源：
DIAMOND AND RELATED MATERIALS | 1996年 / 5卷 / 3-5期
关键词：
diamond nucleation; CVD; process characterisation; nucleation;
D O I：
10.1016/0925-9635(95)00396-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We show that the ion flux of energetic ions is the critical factor for the bias enhancement of the nucleation density of diamond on silicon. The energetic ions penetrate the surface, show little migration and form nanocrystalline graphite. The radicals have low energies and are adsorbed and migrate over the surface. This is confirmed by the shape of the C hillocks formed during biasing. Diamond nucleation is believed to occur either as small diamond crystals, which have grown during biasing, or on graphitic planes, which are oriented locally perpendicular to the surface.
引用
收藏
页码：261 / 265
页数：5
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