Intrinsic stress of ultrathin epitaxial films

被引：32
作者：
Koch, R
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[2] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 05期
关键词：
D O I：
10.1007/s003390051462
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The present article focuses on the stress developing during the deposition of ultrathin epitaxial films in the thickness range of a few atomic layers. The studied systems exhibit the three well-known modes of film growth: Stranski-Krastanow mode [Ge/Si(001), Ge/Si(lll), Ag/Si(lll)], Frank-Van der Merwe mode [Fe/MgO(001)] and Volmer-Weber mode [Ag/mica(001), Cu/mica(001)]. The experimental results demonstrate the important role of the misfit strain as well as the contribution of surface stress effects as mechanisms for the stress in single atomic layers.
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页码：529 / 536
页数：8
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