Electronic transport in silicon nanocrystals and nanochains

被引：22

作者：

Durrani, Z. A. K. ^{[1
,2
]}

Rafiq, M. A. ^{[3
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2AZ, England

[2] Japan Sci & Technol Agcy, SORST Programme, Chiyoda Ku, Tokyo 1028666, Japan

[3] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期

关键词：

Silicon nanocrystals; Silicon nanochains; Silicon nanowires; Single-electron effects; Hopping electron transport; Space charge limited transport; VISIBLE-LIGHT EMISSION; CRYSTALLIZED POLYCRYSTALLINE SILICON; CHEMICAL-VAPOR-DEPOSITION; QUANTUM-DOT TRANSISTOR; THIN-FILM TRANSISTORS; IMPLANTED SIO2 LAYERS; ROOM-TEMPERATURE; DISORDERED-SYSTEMS; COULOMB-BLOCKADE; ELECTRICAL CHARACTERISTICS;

D O I：

10.1016/j.mee.2009.03.123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si nanocrystals and nanochains, prepared by material synthesis, provide a means to define nanoscale devices using growth rather than lithographic techniques. Electronic transport in thin films of Si nanocrystals is influenced strongly by single-electron charging and quantum-confinement effects, and by the grain boundary regions between nanocrystals. This paper reviews electronic transport mechanisms in Si nanocrystal materials. These include thermionic emission of electrons across grain boundaries, space charge limited current, hopping transport, and single-electron charging effects. The fabrication of single-electron devices in Si nanocrystal thin films and nanochains is considered, particularly with regards to their operation at room temperature. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：456 / 466

页数：11

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