Influence of Bi-contents on electric properties of strontium bismuth tantalate ceramics

被引：1

作者：

Komagata, K ^{[1
]}

Okamura, S ^{[1
]}

Takeda, H ^{[1
]}

Shiosaki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan

来源：

ASIAN CERAMIC SCIENCE FOR ELECTRONICS II AND ELECTROCERAMICS IN JAPAN V, PROCEEDINGS | 2002年 / 228-2卷

关键词：

BLSFs; ferroelectric; SBT; strontium bismuth tantalate;

D O I：

10.4028/www.scientific.net/KEM.228-229.219

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The synthesis of the bismuth layer-structured ferroelectric, SrxBiyTa2O9 (SBT; x=0.7-1.0, y=2.00-2.30), ceramics was attempted using a conventional solid-state reaction. Sintering was carried out at 1150degreesC for 2 h to prevent vaporization of the bismuth oxide. SBT ceramics with a random orientation were obtained. The ferroelectric properties along the directions parallel and perpendicular to the pressing direction were measured for these SBT ceramics. The maximum values of the remanent polarization (2P(r)) for x=0.7, 0.8, 0.9, and 1.0 were obtained at Bi contents of y=2.23, 2.15, 2.10, and 2.00 in both directions, respectively.

引用

页码：219 / 222

页数：4

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