Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET

被引：19
作者：
Bhattacharjee, Shubhadeep [1 ]
Ganapathi, Kolla Lakshmi [1 ]
Nath, Digbijoy N. [1 ]
Bhat, Navakanta [1 ,2 ]
机构：
[1] Indian Inst Sci, Ctr Nano Sci & Engn, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Dept Elect Commun Engn, Bangalore 560012, Karnataka, India
来源：
IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 01期
关键词：
Contact resistance; interlayer resistance; Schottky barrier resistance; multilayer MoS2 FET; intrinsic limit; FIELD;
D O I：
10.1109/LED.2015.2501323
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method for the separation of contact resistance (R-contact) into Schottky barrier resistance (R-SB) and interlayer resistance (R-IL) is proposed for multilayered MoS2 FETs. While R-SB varies exponentially with Schottky barrier height (Phi(bn)), R-IL essentially remains unchanged. An empirical model utilizing this dependence of R-contact versus Phi(bn) is proposed and fits to the experimental data. The results, on comparison with the existing reports of lowest R-contact, suggest that the extracted R-IL (1.53 k Omega.mu m) for an unaltered channel would determine the lower limit of intrinsic R-contact even for barrierless contacts for multilayered exfoliated MoS2 FETs.
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收藏
页码：119 / 122
页数：4
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