Berry-phase-mediated topological thermoelectric transport in gapped single and bilayer graphene

被引:40
作者
Zhang, Chuanwei [1 ]
Tewari, Sumanta [2 ]
Das Sarma, S. [3 ]
机构
[1] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA
[2] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[3] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20772 USA
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 24期
关键词
band structure; Berry phase; chemical potential; graphene; nanostructured materials; thermomagnetic effects; EPITAXIAL GRAPHENE; BANDGAP; FIELD; GAS;
D O I
10.1103/PhysRevB.79.245424
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider the anomalous thermoelectric transport in gapped single and bilayer graphene where the gap may be due to broken inversion symmetry. In the presence of the gap, nontrivial Berry phase effects can be shown to mediate a transverse thermoelectric voltage in response to an applied temperature gradient even in the absence of a perpendicular magnetic field. This spontaneous anomalous Nernst effect is nonzero for nonuniform chemical potential in the two inequivalent valleys in the graphene band structure. Conversely, the Nernst response can be used to create a valley-index polarization between the two transverse sample edges as in the analogous valley Hall effect.
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页数:6
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