Ge diffusion on Si surfaces

被引：21

作者：

Dolbak, Andrey E. ^{[1
]}

Olshanetsky, Boris Z. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2006年 / 4卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

surface; silicon; germanium; surface structure; surface diffusion; low energy electron diffraction; Auger electron spectroscopy;

D O I：

10.2478/s11534-006-0015-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 degrees C. surface diffusion coefficients versus temperature have been measured. (C) Versita Warsaw and Springer-Verlag Berlin Heidelberg. All rights reserved.

引用

页码：310 / 317

页数：8

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