31-34GHz low noise amplifier with on-chip microstrip lines and inter-stage matching in 90-nm baseline CMOS

被引：0

作者：

Sanduleanu, Mihai A. T. ^{[1
]}

Zhang, Gang ^{[2
]}

Long, John R. ^{[2
]}

机构：

[1] Philips Res, NL-5656 AE Eindhoven, Netherlands

[2] Delft Univ Technol, Elect Res Lab, NL-2600 AA Delft, Netherlands

来源：

2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2006年

关键词：

millimeter-waves; low noise amplifiers; CMOS; microstrip lines; gain boosting;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ka band low-noise amplifier in a 90-nm bulk CMOS technology is presented. A thin-film microstrip line with ground sidewalls is used for signal distribution, matching and load resonators. The low-noise amplifier comprises two identical cascode stages, with inter-stage matching as gain boosting. The gain boosting circuit improves the gain by 20% and the noise performance by 27% of the cascode LNA. The proposed amplifier achieves a peak power-gain of 19dB with a 3-dB bandwidth of 31 to 34GHz and a noise figure of 3dB in the middle of the band. No extra process options like MIM capacitors or thick oxide devices are used. The die size is 933 pm by 918 pin and the power consumption is 10mW from a 1.2V ( 10%) power supply.

引用

页码：143 / +

页数：2

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