Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study

被引：23
作者：
Saha, Rajesh [1 ]
Goswami, Rupam [2 ]
Bhowmick, Brinda [3 ]
Baishya, Srimanta [3 ]
机构：
[1] Malaviya Natl Inst Technol Jaipur, Dept Elect & Commun Engn, Jaipur 302017, Rajasthan, India
[2] Tezpur Univ, Sch Elect Engn, Tezpur 784028, Assam, India
[3] Natl Inst Technol Silchar, Dept Elect & Commun Engn, Silchar 788010, India
来源：
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2020年 / 67卷 / 11期
关键词：
Temperature; Logic gates; FinFETs; Temperature measurement; Linearity; Transconductance; Frequency control; Ferroelectric FinFET (Fe-FinFET); linearity parameters; RF; analog parameters; temperature; NEGATIVE CAPACITANCE; INTERMODULATION DISTORTION; RF PERFORMANCE; MATERIAL GATE; SOI MOSFETS; DEVICE; HYSTERESIS; MODEL;
D O I：
10.1109/TUFFC.2020.2999518
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
This article presents a simulation study of the impact of variation in temperature on the transfer characteristics and the RF/analog performance like transconductance ( gm), gate capacitance ( Cgg), cutoff frequency ( ft), and transconductance frequency product (TFP) of the ferroelectric FinFET (Fe-FinFET). In addition, the impact of temperature on the linearity parameters such as higher order harmonics ( gm2 and gm3), second- and third-order voltage intercept points (VIP2 and VIP3), third-order power-intercept point (IIP3), third-order intermodulationdistortion (IMD3), and 1-dB compression point is estimated for wide variation of temperature in the Fe-FinFET. It is seen that temperature has a significant impact on the RF/analog and linearity parameters, and these figure of merits (FoMs) are the functions of temperature. Analysis reports that RF/ analog parameters are suppressed, whereas the linearity FoMs are improved as temperature changed from 250 to 350 K.
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收藏
页码：2433 / 2439
页数：7
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