Understanding of Electroconductivity of Thin Film Using Percolation Model, for Reduction in Indium Consumption

被引：1

作者：

Shida, Kazuhito ^{[1
]}

Sahara, Ryoji ^{[1
]}

Mizuseki, Hiroshi ^{[1
]}

Kawazoe, Yoshiyuki ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 2009年 / 73卷 / 03期

关键词：

indium; rare metal; first principles calculation; percolation; DEFECT STRUCTURE; UNIVERSALITY; PARTICLES; OXIDE; ITO;

D O I：

10.2320/jinstmet.73.171

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

Due to its electronic conductivity and transparency, Indium Tin Oxide (ITO) is an irreplaceable material for today's technology, such as various flat panel displays. The resultant increase of the demand for indium is a major concern, but can be solved by understanding the detail of electronic conduction in ITO. For this purpose, we are working on a computational physics research on ITO: a model analysis of thin film with reduced amount of indium as a percolation model. Because ITO is typically formed into thin film electrodes in its applications, we are currently focused on 2D percolation models.

引用

页码：171 / 173

页数：3

共 14 条

[1] Percolation transitions in two dimensions [J].