A Low Phase Error X-band Eight-Channel SiGe PIN Diode Phased Array Receiver

被引：0

作者：

You, Yu ^{[1
]}

Zhu, Siqi ^{[1
]}

Sah, Suman ^{[1
]}

Heo, Deukhyoun ^{[1
]}

Warnick, Karl F. ^{[2
]}

机构：

[1] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99164 USA

[2] Brigham Young Univ, Dept Elect & Comp Engn, Provo, UT 84602 USA

来源：

2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2013年

关键词：

BiCMOS integrated circuits; phased array; phase shifters; radar; receivers; SiGe PIN diode;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low phase error X-band eight-channel SiGe PIN diode phased array receiver for 9.5-11.5 GHz application has been proposed and fabricated in a commercial 0.18-mu m SiGe BiCMOS process. High performance PIN diode switches used in phase shifters ensure low phase error for all phase states. The 9.5-11.5 GHz receiver, which consists of LNAs, VGAs, PIN diode passive phase shifters and active combiners, achieves over 10 dB measured average gain, less than 5 dB NF (at max. gain and ref. phase state) per channel. The RMS gain error is less than 1 dB and the RMS phase error is less than 4.8 degrees at 9.5-11.5 GHz for all phase states. To the authors' best knowledge, this receiver achieves the lowest RMS phase error in multi-channel X-band phased array receivers using passive phase shifting method.

引用

页码：268 / 271

页数：4

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