Synthesis of core/shell ZnO/ZnSe nanowires using novel low cost two-steps electrochemical deposition technique

被引：19

作者：

Ghoul, M. ^{[1
]}

Braiek, Z. ^{[1
]}

Brayek, A. ^{[1
,2
]}

Ben Assaker, I. ^{[1
]}

Khalifa, N. ^{[1
]}

Ben Naceur, J. ^{[1
]}

Souissi, A. ^{[1
]}

Lamouchi, A. ^{[1
]}

Ammar, S. ^{[2
]}

Chtourou, R. ^{[1
]}

机构：

[1] Ctr Rech & Technol Energie, Lab Photovolta, Hammammlif 2050, Tunisia

[2] Univ Paris Diderot, CNRS UMR 7086, ITODYS, Sorbonne Paris Cite, F-75205 Paris, France

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 647卷

关键词：

ZnO/ZnSe core/shell nanowires; type-II; Electrodeposition; Photovoltaic; Optical properties; OPTICAL-PROPERTIES; SOLAR-CELLS; ZNO FILMS; ARRAYS; ELECTRODEPOSITION; PHOTOLUMINESCENCE; HETEROSTRUCTURES;

D O I：

10.1016/j.jallcom.2015.06.100

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work highlights the original use of a two-step electrochemical deposition protocol to grow ZnO/ZnSe core/shell nanowires on a Sn-doped In2O3 (ITO)/glass substrate. The good alignment of the nanowires is verified by the scanning electron microscopy characterization technique in addition to the surface roughness after the ZnSe electrodeposition on the ZnO nanowires lateral facets. The X-ray diffraction patterns and Raman spectra allow estimating that ZnO has grown along the wurtzite (W) structure c-axis. The presence of the type-II interfacial transition between the valence band of ZnSe and the conduction band of ZnO was confirmed by UV-visible spectroscopy. It was proved that the absorbed energy of the developed nanostructures is extended to the near infrared which is well recommended for the photovoltaic applications. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：660 / 664

页数：5

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