A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe

被引:43
作者
He, L [1 ]
Yang, JR [1 ]
Wang, SL [1 ]
Guo, SP [1 ]
Yu, MF [1 ]
Chen, XQ [1 ]
Fang, WZ [1 ]
Qiao, YM [1 ]
Zhang, QY [1 ]
Ding, RJ [1 ]
Xin, TL [1 ]
机构
[1] CHINESE ACAD SCI,SHANGHAI INST TECH PHYS,SHANGHAI 200083,PEOPLES R CHINA
关键词
MBE; HgCdTe; thermal annealing;
D O I
10.1016/S0022-0248(96)01001-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The results of MBE growth and annealing of p-type HgCdTe are described in the paper. It is found that the surface morphology is sensitive to the growth temperature. HgCdTe epilayers showed excellent lateral uniformity in x-values as well as in thickness, relative deviations for x and thickness over a 2 in. wafer were found to be 0.18% and 2.19%, respectively. The hole concentrations in a range of (1-2) x 10(16) cm(-3) with hole mobilities higher than 600 cm(2) V(-1)s(-1) were obtained by p-annealing. MBE grown p-HgCdTe epilayers were successfully incorporated into 32 x 32 focal plane arrays detectors.
引用
收藏
页码:677 / 681
页数:5
相关论文
共 14 条
[1]   MOLECULAR-BEAM EPITAXIAL HGCDTE MATERIAL CHARACTERISTICS AND DEVICE PERFORMANCE - REPRODUCIBILITY STATUS [J].
BAJAJ, J ;
ARIAS, JM ;
ZANDIAN, M ;
PASKO, JG ;
KOZLOWSKI, LJ ;
DEWAMES, RE ;
TENNANT, WE .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) :1067-1076
[2]   ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY PRODUCED HGCDTE LAYERS DOPED DURING GROWTH [J].
BOUKERCHE, M ;
WIJEWARNASURIYA, PS ;
RENO, J ;
SOU, IK ;
FAURIE, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2072-2076
[3]   CHARACTERIZATION OF CDTE FOR HGCDTE SURFACE PASSIVATION [J].
BUBULAC, LO ;
TENNANT, WE ;
BAJAJ, J ;
SHENG, J ;
BRIGHAM, R ;
VANDERWYCK, AHB ;
ZANDIAN, M ;
MCLEVIGE, WV .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) :1175-1182
[4]  
Chen J.S., 1990, U.S. Patent, Patent No. [4,897,152, 4897152]
[5]  
CHEN MC, 1985, J APPL PHYS, V58, P1350
[6]   EMPIRICAL RULE OF INTRINSIC ABSORPTION-SPECTROSCOPY IN HG1-XCDXTE [J].
CHU, JH ;
LI, B ;
LIU, K ;
TANG, DY .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) :1234-1235
[7]   ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT [J].
DESTEFANIS, GL .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :700-722
[8]   ELECTRICAL-PROPERTIES OF SHALLOW LEVELS IN P-TYPE HGCDTE [J].
FINKMAN, E ;
NEMIROVSKY, Y .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1205-1211
[9]   DEPLETION CORRECTIONS IN VARIABLE TEMPERATURE HALL MEASUREMENTS [J].
LEPKOWSKI, TR ;
DEJULE, RY ;
TIEN, NC ;
KIM, MH ;
STILLMAN, GE .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4808-4811
[10]  
LIU K, 1994, APPL PHYS LETT, V64, P2818, DOI 10.1063/1.111435