共 18 条
- [1] Barabasi A.-L., 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
- [2] CD-SEM measurement of line edge roughness test patterns for 193 nm lithography [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 : 674 - 688
- [3] Photo-resist line-edge roughness analysis using scaling concepts [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 : 901 - 909
- [4] Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03): : 1019 - 1026
- [5] CROON A, 2002, UNPUB P IEDM
- [6] ERCKEN M, 2002, UNPUB P INTERFACE 20
- [7] Process dependence of roughness in a positive-tone chemically amplified resist [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3748 - 3751
- [8] Preliminary evaluation of line-edge roughness metrology based on CD-SAXS [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 191 - 198
- [9] Kaya S, 2001, SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, P78
- [10] Spatial frequency analysis of line edge roughness in nine chemically related photoresists. [J]. ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 713 - 724